PART |
Description |
Maker |
2N5153HR |
Hi-Rel PNP bipolar transistor 80 V - 5 A
|
STMicroelectronics
|
V23042-A2003-B101 V23042-A2005-B101 V23042-A2001-B |
12VDC REL 12Vdc的REL 24VDC REL 24Vdc的REL 5VDC REL. 5Vdc时REL FPGA Fusion® Family 600K Gates Commercial 130nm (CMOS) Technology 1.5V 256-Pin FBGA
|
Electronic Theatre Controls, Inc. MITSUMI ELECTRIC CO., LTD.
|
BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
2N2890 |
Bipolar NPN Device in a Hermetically sealed TO39 Bipolar NPN Device.
|
Seme LAB SEMELAB
|
IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package INSULATED GATE BIPOLAR TRANSISTOR From old datasheet system Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB Low Current/ High Performance NPN Silicon Bipolar Transistor Low Current High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
SFBFX86 BFX86 BFX86.MODE4 |
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD Bipolar NPN Device
|
SEMELAB LTD SEME-LAB[Seme LAB]
|
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|