PART |
Description |
Maker |
UPD442000AGU-DD85X-9KH UPD442000AGU-BB55X-9JH UPD4 |
2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
UPD43257BGU-85LL UPD43257BCZ-85LL UPD43257BCZ-70LL |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K位CMOS静态RAM 32K的词8
|
NEC Corp. NEC, Corp.
|
UPD43257BGU-70L-A UPD43257BGU-70LL-A UPD43257BGU-8 |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC http://
|
UPD444012AGY-B10X-MJH UPD444012AGY-B55X-MJH UPD444 |
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION UPD444012A-XDataSheet|DataSheet[07/2001]
x16SRAM
|
NEC
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器 High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
|
TC55W1600FT-70 TC55W1600FT TC55W1600FT-55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC55VBM416AFTN55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|
TC55W800FT |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
|