| PART |
Description |
Maker |
| MR27V6466FTA MR27V6466F |
From old datasheet system
4,194,304-Word x 16Bit or 2,097,152-Word x 32-Bit Synchronous One Time PROM
|
OKI[OKI electronic componets]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC
Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| K6F4016V6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016S4DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R4DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R6EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| CS5506-BSZ CS5508-BSZ |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS
|
Cirrus Logic, Inc.
|
| KM416V4100C KM416V4000C KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N08L1618C2AB2 N08L1618C2A N08L1618C2AB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
|
Brilliance Semiconductor
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
