| PART |
Description |
Maker |
| K6R1016C1C-C10 K6R1016C1C-C12 K6R1016C1C-C15 K6R10 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| K6R1016C1D |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet
|
Samsung Electronic
|
| KM681000ELT-7L KM681000ELG-5 KM681000ELG-7 KM68100 |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 28C64AF-15/J 28C64A-15/J 28C64AF-20/J 28C64A-20/J |
16-Bit DACs with 16-Channel Sample-and-Hold Outputs
Dual, Ultra-Low-Power, 8-Bit, Voltage-Output DACs
128Kx8 EEPROM 128Kx8 EEPROM
|
Microchip Technology, Inc.
|
| K6R1008V1C K6R1008V1C-C K6R1008V1C-C10 K6R1008V1C- |
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
|
Samsung semiconductor
|
| K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K6R1016C1D |
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
Samsung
|
| 28C17A-25/SO 28C17A-25/J 28C17A-25I/J 28C17A-25I/S |
5V, Low-Power, Voltage-Output, Serial 12-Bit DACs
Octal, Serial, 8-Bit DAC with Output Buffers
Dual, Serial Input, Voltage-Output, Multiplying, 12-Bit DAC
12-Bit DACs with 32-Channel Sample-and-Hold Outputs
128Kx8 EEPROM 128Kx8 EEPROM
|
Microchip Technology, Inc.
|
| 28C64AFT-25/SO 28C64AT-25/SO 28C64AFT-25I/SO 28C64 |
32-Channel, 14-Bit, Voltage-Output DACs with Serial Interface
Quad, 10-Bit, Low-Power, 2-Wire, Serial Voltage-Output DAC
Buffered, Fast-Settling, Quad, 12-/10-/8-Bit, Voltage-Output DACs
128Kx8 EEPROM 128Kx8 EEPROM
|
Microchip Technology, Inc.
|
