PART |
Description |
Maker |
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
|
IRF[International Rectifier]
|
STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 CONNECTOR ACCESSORY N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
|
IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
STW20NM60 |
N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|