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K7N321831C - 1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100

K7N321831C_5007770.PDF Datasheet

Part No.

K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N323631C-QC160 K7N323631C-PC250 K7N323631C-PI160

Description

1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100

File Size

549.93K / 25 Page

Maker

Samsung semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: K7N321801M-QC16

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Unit price for :

50: $83.08

100: $78.92

1000: $74.77

Email: oulindz@gmail.com

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Homepage

http://www.samsung.com/Products/Semiconductor/

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Full text search : 1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100

Product Description search : 1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100

Related Part Number

PART	Description	Maker
K7N321801M K7N323601M DSK7N323601M	1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825	512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36	http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7P323688M	1Mx36 & 2Mx18 SRAM	Samsung Electronics
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K7S3236T4C08 K7S3218T4C	1Mx36 & 2Mx18 QDR II b4 SRAM	Samsung semiconductor
K7R323684C K7R320984C K7R321884C	1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM	Samsung semiconductor
K7I321884C K7I323684C	1Mx36 & 2Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M	2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7N163631B-QC16 K7N163631B-QFCI25 K7M161835B-QC65	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]

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