| PART |
Description |
Maker |
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE
20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
| FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
600V N-Channel Advance QFET C-Series
|
http://
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STU26NM60 STU26NM60I |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五（巴西）直|6A条（丁）|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
|
STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| S1HNK60 STS1HNK60 |
N-CHANNEL 600V - 8 OHM - 0.3A SO-8 SUPERMESH POWER MOSFET N沟道600V 8欧姆- 0.3A的SO - 8 SUPERMESH功率MOSFET
N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
