| PART |
Description |
Maker |
| 28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70
Serial-out shift registers with input latches 16-SOIC 0 to 70
Octal bus transceivers 20-PDIP 0 to 70
Serial-out shift registers with input latches 16-PDIP 0 to 70
Voltage-controlled oscillator 14-SOIC 0 to 70
Serial-out shift registers with input latches 16-SO 0 to 70
Shift registers with input latches 20-SOIC 0 to 70
Dual voltage-controlled oscillators 16-SOIC 0 to 70
Dual voltage-controlled oscillators 16-PDIP 0 to 70
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC
5 Volt Bulk Erase Flash Memory
From old datasheet system
|
intel
|
| AM28F256A-120EC AM28F256A-120ECB AM28F256A-120EE A |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
|
Advanced Micro Devices
|
| AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
| AM28F020A-90PEB AM28F020A-90PCB AM28F020A-90JEB AM |
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| AM28F256A AM28F256A-150FCB AM28F256A-70FC AM28F256 |
32K X 8 FLASH 12V PROM, 70 ns, PDIP32
Octal bus transceivers and registers 24-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 200 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
8-Bit Identity/Magnitude Comparators 20-SO 0 to 70
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
Serial-in shift registers with output storage registers 24-PDIP 0 to 70
Serial-in shift registers with output storage registers 24-SOIC 0 to 70
Serial-out shift registers 24-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-PDIP 0 to 70
Serial-out shift registers 24-PDIP 0 to 70
4-by-4 register files with 3-state outputs 16-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-SOIC 0 to 70
4-by-4 register files with 3-state outputs 16-PDIP 0 to 70
Octal bus transceivers and registers 24-PDIP 0 to 70
Octal bus transceivers with open collector outputs 20-PDIP 0 to 70
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29 |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory
From old datasheet system
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
CMOS 3.3V-only block erase flash memory
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AM29F800B |
Sector Erase Flash Memory
|
AMD
|
|
