| PART |
Description |
Maker |
| APT8075BVR APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT8056BVFR |
POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8075BVFR |
POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8020JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 33A 0.200 Ohm
|
Advanced Power Technology
|
| SPA08N80C3 SPP08N80C3 |
Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SK1547-01MR |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）| TO - 220AB现有
N-CHANNEL SILICON POWER MOS-FET
|
Honeywell International, Inc.
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| STU7NA80 5968 |
N - CHANNEL 800V - 1.3 Ohm - 6.5A - Max220 FAST POWER MOSFET
N - CHANNEL 800V - 1.3 - 6.5A - Max220 FAST POWER MOSFET
From old datasheet system
N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
