PART |
Description |
Maker |
A1101R09C-EM1 |
The A1101R09C-EM1 is a high-performance
|
Anaren Microwave
|
IE-784928-NS-EM1 |
IE-784928-NS-EM1 User's Manual | User's Manual[04/1999] IE-784928-NS-EM1 Users Manual | Users Manual[04/1999] IE浏览 784928 -纳秒- EMI的用户手册|用户手册[04/1999]
|
Positronic Industries, Inc.
|
HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5 T-PNP-SI-HV AF PWR AMP High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Vishay Intertechnology, Inc.
|
KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs Feature NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor High Voltage and High Reliability From old datasheet system High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
CXOMHT |
High Temperature/High Stability/Fast Start-up/High Shock
|
STATEK CORPORATION
|
2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
LTC4440ES6 LTC4440 LTC4440EMS8E LTC444009 |
High Speed, High Voltage High Side Gate Driver
|
Linear Technology
|