| PART |
Description |
Maker |
| PTF210451E PTF210451F PTFA210451E |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
|
Infineon Technologies AG
|
| NE1101-00 |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
Rakon France SAS
|
| SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
| DS52-0002 DS52-0002-TR DS52-0002-RTR |
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆
1920-2170 MHz, Low cost two-way SMT power divider
|
Bel Fuse, Inc.
MACOM[Tyco Electronics]
MA-Com
|
| SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB211501F PTFB211501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
