| PART |
Description |
Maker |
| HM514258JP-8S HM514258ZP-8S HM514258P-8S HM514258Z |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
DB Lectro, Inc.
Glenair, Inc.
Accutek Microcircuit, Corp.
|
| HM574256ZP-35R HM574256JP-35R HM574256ZP-40 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
ON Semiconductor
|
| V53C466J70 V53C466J70L V53C466AP60L V53C466P70L V5 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
NIC Components, Corp.
|
| HM511002AZP-7 HM511002AZP-6 HM511002AZP-12 HM51100 |
Compliant to MIL standard, Ribbon cable connectors; HRS No: 610-0192-0 71; Contact Mating Area Plating: Gold
x1 Static Column Mode DRAM x1静态列模式DRAM
|
Infineon Technologies AG
|
| MSM514102D-60SJ MSM514102D-80SJ MSM514102D-80TS-K |
4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE
|
OKI electronic componets
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM
8K x 8 Static RAM
RoboClock® High-speed Multi-phase PLL Clock Buffer
x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| UPD424900LLE-A80 UPD424900LLE-A70 UPD424900LG5M-A8 |
FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
x9 Fast Page Mode DRAM X9热卖快速页面模式的DRAM
|
Powerex, Inc.
|
| TC514101AJ-70 TC514101AP-80 |
4M X 1 NIBBLE MODE DRAM, 70 ns, PDSO20
4M X 1 NIBBLE MODE DRAM, 80 ns, PDIP18
|
|
