PART |
Description |
Maker |
CMP0817BAX-E CMP0817BAX-F70E CMP0817BA1 CMP0817BA2 |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
EM6160FR16AW-12LF EM6160FV16AW-12LF EM6161FR16AW-1 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Sol... Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
EM6163FR32AS-45L EM6163FU16AS-45L EM6163FV8AS-45L |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic Samsung semiconductor
|
EM640FR8AV-85L EM640FT16AV-85L EM640FT8AV-85L EM64 |
512K x8 bit Low Power Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
K6F4008S2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4008R2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% Series 320 tactile switch with multiple color and cap options FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation Intel Corp. Rochester Electronics, LLC Intel, Corp. Sharp, Corp.
|
UPD448012GY-C10X-MJH UPD448012GY-C85X-MJH UPD44801 |
8M-bit(512K-word x 16-bit) Low power SRAM
|
NEC
|