| PART |
Description |
Maker |
| AOD11S60 AOI11S60 |
600V 11A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
| IRFPC50LC |
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
|
IRF[International Rectifier]
|
| STU11NB60 6437 |
From old datasheet system
N-CHANNEL 600V - 0.5 - 11A - Max220 PowerMESH TM MOSFET
N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB11NM60T4 |
N-Channel 600V - 0.4Ohm - 11A TO-220 MDmesh™ POWER MOSFET
|
ST Microelectronics
|
| AOTF11S65 AOT11S65 AOB11S65 |
650V 11A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT60M75PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 60.5A 0.075 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo...
Advanced Power Technology
|
