PART |
Description |
Maker |
CY7C4121KV13 CY7C4141KV13 CY7C4121KV13-600FCXC CY7 |
144-Mbit QDR?IV HP SRAM
|
Cypress Semiconductor
|
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
R1QNA4436RBG-15 |
144-Mbit QDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
|
Renesas Electronics Corporation
|
CY7C1292DV18-200BZXC CY7C1292DV18-167BZXC CY7C1294 |
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.45 ns, PBGA165 9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.5 ns, PBGA165 9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.5 ns, PBGA165 9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1511V18-250BZXC CY7C1511V18-250BZI CY7C1511V18 |
72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.5 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1310CV18-167BZC CY7C1310CV18-167BZI CY7C1314CV |
18-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture 18-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDRII SRAM 2-word Burst 36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
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