| PART |
Description |
Maker |
| ALD114913SA ALD114813 ALD114813PC ALD114813SC ALD1 |
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
|
ALD[Advanced Linear Devices]
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| 3N211 3N212 3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion)
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion)
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| BF996S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
TEMIC Semiconductors
|
| BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
| 2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET
400V N-channel depletion - Mode vertical DMOS FET
N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
| S525T S525 |
N?Channel MOS-Fieldeffect Triode, Depletion Mode
From old datasheet system
N-Channel MOS-Fieldeffect Triode, Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| DN2535N3-G DN2535N5-G |
N-Channel Depletion-Mode Vertical DMOS FETs 0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Supertex, Inc.
|
| SD5501 SD5501N XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
Calogic LLC
CALOGIC[Calogic LLC]
CALOGIC[Calogic, LLC]
|
| 2N548606 2N5486G 2N5486 |
JFET VHF/UHF Amplifiers N?Channel - Depletion
JFET VHF/UHF Amplifiers N−Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
| DN3135N8-G |
N-Channel Depletion-Mode Vertical DMOS FETs 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
|
