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GP9973 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GP9973_5426244.PDF Datasheet


 Full text search : N-CHANNEL ENHANCEMENT MODE POWER MOSFET
 Product Description search : N-CHANNEL ENHANCEMENT MODE POWER MOSFET


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List of Unclassifed Manufacturers
ETC
N.A.
Zetex Semiconductors
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
STB11NB40 5418 N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
STP4NB50FP STP4NB50 5320 N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
意法半导
STMicro
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
ARF475LF ARF475FL N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
From old datasheet system
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ADPOW
Advanced Power Technology
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
IXTH40N30NBSP IXTH40N30 IXTM40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
IXYS Corporation
LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP
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ICE Components, Inc.
ICE COMPONENTS INC
STP80N03L-06 4881 N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管)
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
 
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