| PART |
Description |
Maker |
| CR4-575L-GU24-D CR4-575L-27K-12-GU24-D CR4-575L-40 |
CR4 LED Downlight - 4
|
Cree, Inc
|
| RTO-2W07-004 RTO-2W07-005 |
SafeSite RTO LED WHITE DOWNLIGHT
|
Dialight Corporation
|
| FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDMC267412 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ
|
Fairchild Semiconductor
|
| P6SMB9.1 P6SMB6.8 P6SMB10 |
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
|
Taiwan Semiconductor Co...
|
| MCF51EM2562 MCF51EM256 |
MCF51EM256-based Poly Phase Energy Meter Reference Design 220V Technical Specifications
MCF51EM256-based Poly Phase Energy Meter Reference Design 220V Technical Specifications
|
Freescale Semiconductor, Inc
|
| CL220K4-G CL220N5-G |
Simple, 220V, 20mA, Temperature-Compensated, Constant Current, LED Driver IC
|
Supertex, Inc
|
| BZD17C51P |
0.8W, 11V - 220V Voltage Regulator Diodes
|
Taiwan Semiconductor Co...
|
| AD780CR AD780CR-REEL7 AD780BN AD780BR AD780BR-REEL |
ECONOLINE: REC2.2-S_DRW(Z)/H* - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- 4.5-9V, 9-18V, 18-36V, 36-72V Wide Input Range 2 : 1- UL94V-0
Replacement bulbs are sold in packs of ten; Light Type: Bulb; Rated Voltage: 220V; Style: Replacement bulbs; Volts & Watts: 220V10W; Applicable Model
2.5 V/3.0 V High Precision Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8
|
http://
AD[Analog Devices]
Analog Devices, Inc.
|
| P2353AB P2353AA P2300EC P0602AARP P1402AARP P1602A |
MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to 85C, 64-TQFP, TRAY
MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to 70C, 68-PLCC, TUBE
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-PLCC, TUBE
18LD 20MHZ .5K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|77V V(BO) MAX|800MA I(S)|TO-220VAR
MCU CMOS 18 LD 20MHZ 1K FLASH, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|160V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|220V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|300V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 4MHZ 1K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, TUBE
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SPDIP, TUBE
MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY
SIDAC|180V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 20LD 2K FLASH, 0C to 70C, 20-SSOP 208mil, T/R
SIDAC|220V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
18LD 20MHZ 2K EPRM/128 EEPROM, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
SIDAC|40V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|210V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 20MHZ 2K FLASH, -40C to 85C, 20-SSOP 208mil, T/R
20LD 4MHZ 2K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, T/R
MCU CMOS 18 LD LOW PWR, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC的| 77V V（下公报）最大| 800mA的我（县）|220VAR
SIDAC的| 40V的五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 130V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|20VAR
SIDAC的| 220五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 40 LD 4MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 10MHZ 8K OTP, 0C to 70C, 44-PLCC, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|98V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 98V V（下公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|25V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 25V的五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 220五（公报）最大| 800mA的我（县）|DO - 214AA
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 125C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
14 PIN, 4KB FLASH, 128 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R SIDAC的| 130V五（公报）最大| 800mA的我（县）|20VAR
14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to 85C, 14-SOIC 150mil, T/R SIDAC的| 98V V（下公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 40MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to 125C, 44-MQFP, TRAY SIDAC的| 25V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 400V五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 68 LD 16MHZ 16K EPRM, 0C to 70C, 68-PLCC, TUBE SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SOIC 300mil, T/R SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
SIDAC|250V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 250V五（公报）最大| 800mA的我（县）|20VAR
|
Littelfuse, Inc.
Ohmite Mfg. Co.
Analog Devices, Inc.
Vishay Intertechnology, Inc.
Molex, Inc.
Vicor, Corp.
TE Connectivity, Ltd.
Marktech Optoelectronics
Intel, Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
|
