| PART |
Description |
Maker |
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| 2N5209 2N5210 ON0057 2N5209-D 2N5210RLRA 2N5209RLR |
Amplifier Transistors NPN Silicon
Ampllfler Translstor
From old datasheet system
Amplifier Transistors(NPN Silicon)
Amplifier Transistor NPN
|
ON Semiconductor
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3669 E000874 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| 2SC383 2SC383TM 2SC388ATM E000890 |
Silicon NPN transistor for TV final picture IF amplifier applications
From old datasheet system
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS) 瑞展型（电视最后一张图片和IF放大器应用）
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| 2SC5171 E001055 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC3279 2SC3279N |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 晶体管|晶体管|叩| 10V的五（巴西）总裁|甲一（c）|2
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Sanyo Semicon Device
Toshiba Semiconductor
Toshiba Corporation
|
| KTD1510 |
Triple Diffused NPN Transistor(Hign Power Amplifier,Darlington Transistor)(涓???╂?NPN?朵?绠★?澶у????澶у???揪??】?朵?绠★?)
|
KEC Holdings
|
