| PART |
Description |
Maker |
| KVR400X72RC3A/512 |
512MB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM (64x4) 512MB400MHz的的DDR ECC的注册CL33-3-3）内存（64x4
|
Powerex, Inc.
|
| KVR133X72RC3L/1024 |
1024MB 133MHz ECC Registered CL3 Low Profile DIMM 1024MB33MHz的ECC的超薄注册CL3内存
|
RIA Connect
|
| KVR133X64SC3L/512 |
512MB 133MHz Non-ECC CL3 Low Profile SODIMM 512MB33MHz的非ECC CL3超薄的SODIMM
|
Electronic Theatre Controls, Inc.
|
| SDN12864L1B62MT-50 SDN12864L1B62MT-60 |
1024MB DDR SDRAM SO-DIMM
|
List of Unclassifed Man...
|
| SDU01G64H3BF2MT-50R SDU01G64H3BF2MT-60R |
1024MB DDR ?unbuffered DDR1 UDIMM
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| W3EG2256M72ASSR202AJD3MG W3EG2256M72ASSR202AJD3XG |
512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WHITE ELECTRONIC DESIGNS CORP
White Electronic Design...
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M36 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HDD32M72B9 HDD32M72B9-13A HDD32M72B9-13B HDD32M72B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM
|
http://
HANBIT[Hanbit Electronics Co.,Ltd]
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
