Part Number Hot Search : 
MAX9244 SB121 03800 TW9960 2SK316 30TA60C XC6108 2S6YD08
Product Description
Full Text Search

GT30J301 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

GT30J301_5545415.PDF Datasheet

 
Part No. GT30J301
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

File Size 322.97K  /  7 Page  

Maker

TOSHIBA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT30J301
Maker: TOSHIBA
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $2.95
  100: $2.81
1000: $2.66

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT30J301 Datasheet PDF Downlaod from Datasheet.HK ]
[GT30J301 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT30J301 ]

[ Price & Availability of GT30J301 by FindChips.com ]

 Full text search : Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


 Related Part Number
PART Description Maker
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
MGW14N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP11N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
CM1200HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
IRG4PSC71K-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
MGP15N60U Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
IRG4PC30KPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4BC40UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
GT30J301 Chip GT30J301 buffer GT30J301 application GT30J301 switching GT30J301 Serie
GT30J301 pulse GT30J301 Timer GT30J301 Channel GT30J301 LPE model GT30J301 analog
 

 

Price & Availability of GT30J301

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.14931702613831