| PART |
Description |
Maker |
| WT-Z106P-4-14 |
Zener Diode Chips for ESD Protection
|
Weitron Technology
|
| WT-Z106P-AU4-14 |
Zener Diode Chips for ESD Protection
|
Weitron Technology
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| WT-Z224V-AU4 |
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
|
Weitron Technology
|
| RD6.2Z |
ZENER DIODE 200 mW ESD PROTECTION 5 V Signal Line MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
