PART |
Description |
Maker |
EDI2AG27265V10D1 |
2x64Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,10纳秒,同同步突发静态存储器模块x64Kx72.3伏,10纳秒,同同步脉冲静态内存模块)
|
ELNA CO., Ltd.
|
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM 133MHz 8.5ns 256K x 36 9Mb sync burst SRAM 150MHz 7.5ns 256K x 36 9Mb sync burst SRAM 166MHz 7ns 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
BA7078AF1 BA7078AS BA7078AF BA7078AF-E2 |
Silicon Monolithic Integrated Circuit Sync.Seperator/Sync. Detector IC for Multi-Sync. Monitor
|
ROHM[Rohm]
|
GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 |
8 Megabyte Sync/Sync Burst, Dual Key DIMM
|
White Electronic Designs Corporation
|
EDI2CG472128V85D2 EDI2CG472128V12D2 EDI2CG472128V1 |
4 Megabyte Sync/Sync Burst, Dual Key DIMM
|
WEDC[White Electronic Designs Corporation]
|
EDI2AG272128V10D1 EDI2AG272128V9D1 EDI2AG272128V12 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
BA7078AF/AS |
Multimedia LSIs > For monitor > Sync separation/sync judgement OC for monitor
|
ROHM
|
CD54HC162F3A CD54HC162H/3 |
HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DECADE COUNTER, CDIP16 HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DECADE COUNTER, UUC16
|
HARRIS SEMICONDUCTOR
|