| PART |
Description |
Maker |
| CGY1049 |
1 GHz, 29 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGY1047 |
1 GHz, 27 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| S10040200P |
GaAs Push Pull Hybrid 40 - 1000MHz 20dB min. Gain @ 1000MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S5540340 |
GaAs Push Pull Hybrid 40 - 550MHz 34.0dB min. Gain @ 550MHz 280mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| HMC31307 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK/ DC - 6.0 GHz
|
Hittite Microwave Corporation
|
