| PART |
Description |
Maker |
| K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制（数字电位器）电位
IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP
AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
| REC110L3F103W REC110L3E103W REC110L3D103W REC110L3 |
Precision Linear Transducers, Conductive Plastic, Compact, Robust, Large Measurement Range, High Accuracy, Long Life, Essentially Infinite Resolution, Easy Mounting
Precision Linear Transducers Conductive Plastic (REC)
Precision Linear Transducers/ Conductive Plastic (REC)
Precision Linear Transducers, Conductive Plastic (REC) 精密线性传感器，导电塑料（承包
CRIMP TOOL; RoHS Compliant: NA 精密线性传感器，导电塑料（承包
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
Analog Devices, Inc.
|
| JA21000 JA21XXX |
Useful Voice ROMless Voice Synthesizer And Controller
|
Jaztek
|
| 178289-7 |
REC HSG FOR DYNAMIC DPUBLE ROW DYNAMIC D-3100 REC HSG
|
Tyco Electronics
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MSM66P56-XX MSM6656 |
Internal Mask ROM Voice Synthesis IC, Internal One-Time-Programmable OTP ROM Voice Synthesis IC, External ROM Drive Voice Synthesis IC
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| HA12133MP |
PRE, REC, eguallzer IC for R-DAT
PRE,REC,EQUALLZER IC FOR R-DAT
|
Hitachi Semiconductor
|
| K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/ |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| S29GL032M10BBIR10 S29GL032M10BBIR12 S29GL032M10BBI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142-EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
|
Spansion, Inc.
|
| ST24FW21 ST24FW21B1TR ST24FW21B6TR ST24FW21M1TR ST |
1 Kbit x8 Dual Mode Serial EEPROM for VESA PLUG & PLAY
1KB (X8) DUAL MODE SERIAL EEPROM FOR VESA PLUG & PLAY
1KB (X8) DUAL MODE SERIAL EEPROM FOR VESA PLUG & PLAY
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
