| PART |
Description |
Maker |
| 90-ARCE-X-X-X |
OUTLINE, WR90 ARC DETEC., 90 E-BEND
|
Advanced Technical Materials Inc.
|
| SZA-3044Z SZA-3044 |
2.7-3.8GHz 5V 1W Power Amplifier
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| AM27C010-90PI AM27C010-150DC AM27C010-120DE AM27C0 |
1.6V, 1µA Precision Rail-to-Rail Input and Output Op Amp; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 85°C
Very Low Noise, Differential Amplifier and 10MHz Lowpass Filter; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
40MHz to 3.8GHz RF Power Detector with 75dB Dynamic Range; Package: DFN; No of Pins: 8; Temperature Range: -40°C to 85°C
1 Megabit (128 K x 8-Bit) CMOS EPROM(174.08 k) 1兆位28亩8位）的CMOS存储器（174.08十一
1 Megabit (128 K x 8-Bit) CMOS EPROM(174.08 k) 1兆位128亩8位）的CMOS存储器（174.08十一
|
Advanced Micro Devices, Inc.
TUSONIX, Inc.
YEONHO Electronics Co., Ltd.
|
| D10040220GTH |
GaAs Power Doubler Hybrid 40MHz to 1000MHz
|
RF Micro Devices
|
| ARN12A24X ARN12A24Z ARN12A4HX ARN12A4HZ ARN12A12X |
8GHz, 150W CARRYING POWER (at 2GHz) MICROWAVE RELAYS
8GHz, 150W CARRYING POWER (at 2GHz) MICROWAVE RELAYS
|
Panasonic Semiconductor
|
| ARF1500 |
RF POWER MOSFET 125V 900W 40MHz
ER 3C 3#16 PIN RECP WALL 射频功率MOSFET N沟道增强模式
|
Advanced Power Technology, Ltd.
|
| ARF1502 |
RF POWER MOSFET 65V 1500W 40MHz
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D8740180GT |
GaAs Power Doubler Hybrid 40MHz to 870MHz
|
RF Micro Devices
|
