| PART |
Description |
Maker |
| M27V101 |
NND - 1 MBIT (128KB X8) LOW VOLTAGE UV EPROM & OTP EPROM
|
ST Microelectronics
|
| M27V405 |
NND - 4 MBIT (512KB X8) LOW VOLTAGE OTP EPROM
|
ST Microelectronics
|
| M27C202-100B1TR M27C202-100B3TR M27C202-100B6TR M2 |
From old datasheet system
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
CAP .18UF 400V POLYPROPYLENE
RES 200-OHM 5% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
2 Mbit 128Kb x16 UV EPROM and OTP EPROM 2兆位存储28KB的x16紫外线和OTP存储
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler 2兆位存储28KB的x16紫外线和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
HIROSE ELECTRIC Co., Ltd.
|
| M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70
Triple 3-Input Positive-AND Gates 14-SO 0 to 70
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48T128V M48T128Y 5746 |
3.3V-5V 1 Mbit (128Kb x 8) TIMEKEEPER ? SRAM
From old datasheet system
|
STMicro
|
| M29F010B |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory
|
ST Microelectronics
|
| M36W108AT120ZM6T M36W108AB100ZM6T M36W108AT100ZM6T |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product 81兆8，启动块闪存1兆位128KB的x8 SRAM的低电压多媒体存储产
|
意法半导
STMicroelectronics N.V.
|
| M48Z129V M48Z129V-70PM1 M48Z129V-85PM1 M48Z129VPM |
3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM 3.3V/5V兆位的SRAM 128KB的x8 ZEROPOWER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 29F200 M295V200BB45M1T M295V200BB45N1T M29F200BB45 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
Single SVS For 3.0V Systems W/Programmable Time Delay 8-SOIC -40 to 85
Single SVS For 3.0V Systems W/Programmable Time Delay 8-PDIP -40 to 85
Single Schmitt-Trigger Inverter 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
|
意法半导
STMicroelectronics N.V.
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
