| PART |
Description |
Maker |
| CDBER70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| CDBK70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| CDBUR70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装，高可靠性的应用（共阳极）（双肖特基势垒二极管（高可靠性应用，TO258金属封装，共阳极连接））
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接))
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| ACDST-99-G ACDST-70-G |
Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| U30FWJ2C53M |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Low Forward Voltage Schottky Barrier Type Switching Mode Power Supply Application Converter&Chopper Application
|
TOSHIBA
|
| MBR10100CT MBR10200CT |
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| TCMBR10200CT TCMBR10100CT TCMBR10150CT |
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| U2JC44 U2BC44 U2GC44 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
