| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2058 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA2059 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA1160 E000473 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC6134 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SA205606 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SC4685 2SC468504 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA124207 2SA1242 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
|
TOSHIBA
|
| 2SA131407 2SA1314 |
Strobe Flash Applications Audio Power Applications
|
Toshiba Semiconductor
|
