| PART |
Description |
Maker |
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SD1018 |
RF AND MICROWAVE TRANSISTORS VHF AND FM MOBILE APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| MS1401 |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS
|
Advanced Power Technolo...
Advanced Power Technology
|
| 2SC2053 SC2053 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 3SK226 E001705 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER , FM TUNER APPLICATIONS)
TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS
From old datasheet system
|
Toshiba Semiconductor
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| HN3C01F |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MOC |
Applications: Wired Network, Automotive, Mobile Communication, WiMAX, WLAN, Mobile
|
MERITEK ELECTRONICS COR...
|
| HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
|
Qimonda AG
|
| HYB18M512160BFX HYB18M512160BFX-7.5 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
|
Qimonda AG
|
| HYB18L512160BF-7.5 HYE18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
http://
|
| HYE18L256169BFX-7.5 HYB18L256169BFX HYB18L256169BF |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
