| PART |
Description |
Maker |
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1 |
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C516-55N6TR |
512 Kbit 32Kb x16 OTP EPROM
|
ST Microelectronics
|
| M27V256 M27V256-100B1TR M27V256-100B6TR M27V256-10 |
NND - 256 KBIT (32KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 18-Bit Universal Bus Transceiver With 3-State Outputs 56-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-TSSOP -40 to 85 256千位2KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的，I2C同步2线总线
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group
SIEMENS AG
SIEMENS A G
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| CA4900S |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
|
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
