| PART |
Description |
Maker |
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C512 |
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27V512 M27V512-100B1TR M27V512-100B6TR M27V512-10 |
Programmable Logic Controller; For Use With:MicroSmart series PLCs; Supply Voltage:24VDC 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
Quadruple 2-Input Positive-NAND Buffers/Drivers 14-PDIP 0 to 70 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
STMicroelectronics N.V.
Hitachi,Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
|
EEPROM
NIC Components, Corp.
PLX Technology, Inc.
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| C30616BQC-07-SC C30616EQC-07-SC C30617BST-07-SC C3 |
Ultrafast high voltage rectifier
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
Ultrafast rectifier PDP energy recovery
4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory
High voltage ultrafast diode
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory
1 Mbit serial I²C bus EEPROM
512 Kbit Serial SPI bus EEPROM with high speed clock
256 Kbit serial SPI bus EEPROM with high-speed clock
300V HYPERFAST RECTIFIER
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
32 Kbit and 64 Kbit serial SPI bus EEPROMs with high-speed clock
(CRT TV horizontal deflection) high voltage damper diode
HIGH FREQUENCY SECONDARY RECTIFIERS
128 Kbit serial SPI bus EEPROM with high speed clock
4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电
16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock 光电
Ultrafast recovery - 1200 V diode 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电
Ultrafast recovery - high voltage diode 光电
Damper modulation diode for CRT TV 光电
DAMPER MODULATION DIODE FOR VIDEO 光电
4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电
HIGH EFFICIENCY ULTRAFAST DIODE 光电
HIGH VOLTAGE ULTRAFAST RECTIFIER 光电
Ultrafast recovery diode 光电
|
ECS, Inc.
Microchip Technology, Inc.
TE Connectivity, Ltd.
DB Lectro, Inc.
Electronic Theatre Controls, Inc.
Samtec, Inc.
TriQuint Semiconductor, Inc.
Infineon Technologies AG
Allegro MicroSystems, Inc.
Rochester Electronics, LLC
|
| M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| CY14B512Q2A-SXI CY14B512Q1A-SXI CY14B512Q1A-SXIT |
512-Kbit (64 K × 8) SPI nvSRAM
|
Cypress Semiconductor
|
| M24C16-125 M24C08-125 M24C02-125 M24C04-125 |
Automotive 16-Kbit, 8-Kbit, 4-Kbit and 2-Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
