| PART |
Description |
Maker |
| MC33198D |
Automotive High Side TMOS Driver
|
MOTOROLA
|
| 33285 |
Dual High-Side TMOS Driver 双高边的TMOS驱动
|
飞思卡尔半导体(中国)有限公司
|
| MC33091 MC33091AD MC33091AP ON0969 |
HIGH-SIDE TMOS DRIVER
From old datasheet system
|
Motorola, Inc
|
| MC33091 MC33091A MC33091AP |
HIGH-SIDE TMOS DRIVER 高边TMOS驱动
Regulating Pulse-Width Modulator 16-SOIC -25 to 85 BUF OR INV BASED MOSFET DRIVER, PDIP8
|
Motorola Mobility Holdings, Inc.
|
| IRS21814STRPBF |
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs, All High Voltage Pins On One Side, and SPLG
|
International Rectifier
|
| AM2971ALCB AM2971ALE AM2971DE AM2971DC AM2971A/BJA |
High and Low Side Driver, Shutdown Input in a 14-pin DIP package; A IR2112 packaged in a Lead-Free 16-Lead SOIC
User Programmable Special Function ASIC
High and Low Side Driver, Shutdown Input in a 14-pin DIP package; A IR2112 packaged in a 16-Lead SOIC
High and Low Side Driver, Shutdown Input in a 14-pin DIP package; A IR2112 packaged in a Lead-Free 14-Lead PDIP
High and Low Side Driver, Shutdown Input in a 14-pin DIP package; A IR2112 packaged in a 14-Lead PDIP
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package; A IR2110 packaged in a Lead-Free 16-Lead PDIP -2 Lead
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package; A IR2110 packaged in a 14-Lead PDIP
Half Bridge Driver, Soft Turn-On, All High Voltage Pins on One Side, Separate High and Low Side Inputs, Programmable 0.5-5us Deadtime in a 14-pin DIP package; A IR21084 packaged in a Lead-Free 14-Lead SOIC
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a 28-pin DIP package; A IR2135 packaged in a Lead-Free mod. 44-Lead PLCC
用户可编ASIC的特殊功
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a 28-pin DIP package; A IR2135 packaged in a 28-Lead SOIC 用户可编程ASIC的特殊功
|
Amphenol, Corp.
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| AUIRS20161S |
One high side output and internal low side Vs recharge.
Automotive Grade High Side Driver with Internal Vs Recharge in a SO-8 package
|
International Rectifier
International Rectifier, Corp.
|
| IPS511S IPS511 IPS511STRL |
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
IRF[International Rectifier]
|
| DGD21064 DGD21064S14-13 |
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14
|
Diodes Incorporated
|
| IRS21952STRPBF IRS21952SPBF |
HIGH SIDE & DUAL LOW SIDE DRIVER IC
|
International Rectifier
|
