| PART |
Description |
Maker |
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
From old datasheet system
|
TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| APTGF150A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| FSBM30SH60 FSBM30SH60A |
30A, Smart Power Module (SPM)
SPMTM (Smart Power Module)
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
|
Fairchild Semiconductor Corporation
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| WF512K64-120G4WM5 WF512K64-90G4WM5 WF512K64-120G4W |
70ns; 5V power supply; 512K x 64 flash module
Flash MCP
512Kx64 5V FLASH MODULE
120ns; 5V power supply; 512K x 64 flash module
90ns; 5V power supply; 512K x 64 flash module
|
WEDC[White Electronic Designs Corporation]
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| OL6204N-50 OL6204N-50AP OL6204N-50BP OL6204N-BP OL |
From old datasheet system
1.6 um High-Power DIP Module with 9mm Profile
1.6 レm High-Power DIP Module with 9mm Profile
1.6 m High-Power DIP Module with 9mm Profile
1.6 μm High-Power DIP Module with 9mm Profile
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle
|
OKI electronic eomponets
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| WF128K64-XG4WX5 WF128K64-XG4W5 WF128K64-120G4WI5 W |
90ns; 5V power supply; 128K x 64 flash module
150ns; 5V power supply; 128K x 64 flash module
128Kx64 5V Flash Module(128Kx64,5V闪速存储器模块)
Flash MCP
120ns; 5V power supply; 128K x 64 flash module
|
White Electronic Designs Corporation
|
| BSM121AR C67076-S1014-A2 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
