PART |
Description |
Maker |
M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
SST36VF1601C-70-4C-EK SST36VF1602C-70-4I-EK SST36V |
16 Mbit (x8/x16) Dual-Bank Flash Memory 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 16 Mbit (x8/x16) Dual-Bank Flash Memory 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽,复用的I / O,双行,突发1.8V电源快闪记忆
|
STMicroelectronics N.V. 意法半导
|
M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product 32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
M29DW324DT |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29DW323DB |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多
|
STMicroelectronics N.V. 意法半导
|
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|