| PART |
Description |
Maker |
| SOM-5760 SOM-5760-S1A1E SOM-5760-S6A1E |
Intel? Atom SCH US15W XL COM-Express CPU Module
Intel? Atom?/a> SCH US15W XL COM-Express CPU Module
Intel垄莽 Atom垄芒 SCH US15W XL COM-Express CPU Module
|
Advantech Co., Ltd.
|
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
| SM6HT24A SM6HT27A SM6HT36A SM6HT43A 6565 SM6HTXXA |
From old datasheet system
HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS
HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| MIC502105 MIC5021YM MIC5021YN |
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-DIP; Mounting Type:Through Hole BUF OR INV BASED MOSFET DRIVER, PDIP8
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-SOIC; Mounting Type:Surface Mount RoHS Compliant: Yes BUF OR INV BASED MOSFET DRIVER, PDSO8
High-Speed High-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
| T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC
High temperature 20 A Snubberless TRIACs
High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
| AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B- |
HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温
|
Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
