| PART |
Description |
Maker |
| 2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列，包IGBT200X75A
5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| 7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) 15 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| FP15R12KE3G |
25 A, 1200 V, N-CHANNEL IGBT
IGBT-Module
|
eupec GmbH
http://
|
| SK8GD12607 SK8GD126 |
IGBT Module 15 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| MUBW15-12T7 |
30 A, 1200 V, N-CHANNEL IGBT MODULE-24
|
IXYS, Corp.
|
| PM150CSD12 PM150CSD120 |
Intellimod?/a> Module Three Phase IGBT Inverter Output (150 Amperes/1200 Volts)
Intellimod⑩ Module Three Phase IGBT Inverter Output (150 Amperes/1200 Volts)
Intellimod Module Three Phase IGBT Inverter Output (150 Amperes/1200 Volts)
|
http://
POWEREX[Powerex Power Semiconductors]
|
