PART |
Description |
Maker |
BUK212-50Y BUK212_217_50Y-01 BUK217-50Y |
BUK212-50Y; BUK217-50Y; Single channel high-side TOPFET(tm) Single channel high-side TOPFET⑩ From old datasheet system Single channel high-side TOPFET TM Single channel high-side TOPFET垄芒 Single channel high-side TOPFET?/a> 25 A BUF OR INV BASED PRPHL DRVR, PSSO4 Single channel high-side TOPFET??/span>
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
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Fairchild Semiconductor
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2SK2038 K2038 |
2SK2038 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR From old datasheet system N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型(高速,高电流开关应用)
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Toshiba. TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
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HCNW135 HCNW135-020 HCPL4503 6N136 6N136-020 6N136 |
HCPL-2502 · Single Channel, High Speed Optocouplers Single Channel, High Speed Optocouplers 单通道,高速光电耦合 XTAL CER SMT 6X3.5 2PAD 单通道,高速光电耦合 2 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps
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Agilent(Hewlett-Packard... Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Avago Technologies, Ltd. TE Connectivity, Ltd.
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TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
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Toshiba Corporation Toshiba Semiconductor
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VND810SP VND810SP13TR |
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 双通道高边驱动 DOUBLE CHANNEL HIGH SIDE DRIVER DOUBLE CHANNEL HIGH SIDE DRIVER
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
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http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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STK417-130 STK417-000 STK417-090 STK417-0X0 |
2 CHANNEL HIGH EFFICIENCY AF POWER AMPLIFIER 2-Channel High Effiency AF Power Amplifier 50W x 2 ~ 100W X 2
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
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