PART |
Description |
Maker |
K7N803645A K7N801845A |
256Kx36-Bit Pipelined NtRAMData Sheet 512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
K7N403609A |
128Kx36-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
DP80390CPU |
Pipelined High Performance 8-bit Microcontroller
|
Digital Core Design
|
DP8051CPU03 DP8051CPU |
Pipelined High Performance 8-bit Microcontroller ver 3.10
|
Digital Core Design
|
KM732V696 KM732V696L |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
KM732V688 KM732V688L |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|