PART |
Description |
Maker |
MRF9200LR306 MRF9200LSR3 MRF9200LR3 |
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
|
MRF21180 |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
B39171-B3804-U210 B3804 |
SAW Components Low-loss Filter 170,2 MHz 1 FUNCTIONS, 170.2 MHz, SAW FILTER
|
EPCOS[EPCOS] EPCOS AG
|
AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
SKY77542 |
Tx - Rx iPAC- FEM for Dual-Band GSM/GPRS (880 - 915 MHz), (1710 - 1785 MHz)
|
Skyworks Solutions Inc.
|
SKY77555 |
Tx-Rx FEM Based on CMOS PA for Dual-Band GSM / GPRS (880-915 MHz and 1710-1785 MHz)
|
Skyworks Solutions Inc.
|
MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF210 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
|
MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|