| PART |
Description |
Maker |
| 2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| MRF4427 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON
|
Motorola, Inc
|
| NE97733-T1B-A |
PNP SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs
|
|
