PART |
Description |
Maker |
MX26L6419TC-10 MX26L6419 |
64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
|
MCNIX[Macronix International]
|
MB84VP23481FK-70PBS MB84VP23481FK-70 |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
SPANSION[SPANSION]
|
MB84VD23180FM-70PBS MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM
|
SPANSION[SPANSION]
|
MB84SD23280E-70PBS MB84SD23280EFE-70 |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
AMD
|
MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
UPD42S4210ALE-50 UPD424210AG5-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
LC321667BJ-80 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Sanyo Electric Co., Ltd.
|
M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|