| PART |
Description |
Maker |
| IS42VM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| HY57V643220DT-6 HY57V643220DLTP-45 HY57V643220DLTP |
4Banks x 512K x 32bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT- |
4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5Y7A2DLMP-HF HY5Y7A2DLM-HF |
4Banks x 4M x 32bits Synchronous DRAM
|
http://
Hynix Semiconductor
|
| IS42VM32400H |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM32400F-75BLI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solu...
|
| IS42VM32400G-75BI IS42VM32400G-75BLI IS42SM32400G- |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
All pins are compatible with LVCMOS interface
|
Integrated Silicon Solu...
|
| IS46LR32160B |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| T436432B-5S T436432B-55S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
