| PART |
Description |
Maker |
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| EBR25EC8ABKD-8C EBR25EC8ABKD-AD EBR25EC8ABKD-AE EB |
256MB 32-bit Direct Rambus DRAM RIMM?/a> Module
256MB 32-bit Direct Rambus DRAM RIMM Module
256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
| EM488M3244VBA-8F |
256Mb SDRAM
|
List of Unclassifed Manufacturers
http://
|
| K4H561638D-GCB0 K4H561638D-GLB0 K4H561638D-GLB3 K4 |
DDR 256MB
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYM75V32M636LT6-H |
SDRAM - SO DIMM 256MB
|
Hynix Semiconductor
|
| HYS72T32000HR-3.7-A HYS72T32000HR-5-A HYS72T64001H |
256MB - 4GB, 240pin
|
Infineon
|
