| PART |
Description |
Maker |
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| V62C3162048LL-70T V62C3162048LL-35T V62C3162048LL- |
Ultra Low Power 128K x 16 CMOS SRAM 128K的超低功耗16 CMOS SRAM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| IS62LV12816BLL IS62LV12816BLL-10B IS62LV12816BLL-1 |
x16 SRAM x16的SRAM
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IC62C1024AL IC62C1024ALNEW IC62C1024AL-35QI IC62C1 |
55ns; 5V; 128K x 8 low power CMOS static RAM
128K X 8 LOW POWER CMOS SRAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| P4C1023-55CC P4C1023-55CI P4C1023-55CJC P4C1023-55 |
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDIP32
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDSO32
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 55 ns, CDIP32
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| V62C3802048LL-35T V62C3802048LL-35V V62C3802048LL- |
256K X 8 STANDARD SRAM, 35 ns, PDSO32
256K X 8 STANDARD SRAM, 45 ns, PDSO32
Ultra Low Power 256K x 8 CMOS SRAM 超低功256K × 8 CMOS SRAM
Ultra Low Power 256K x 8 CMOS SRAM 超低功56K × 8 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| MT5C1008C-30LL/MIL |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
|
Austin Semiconductor, Inc
|
| BS616LV2015 BS616LV2015TI BS616LV2015AC BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Plug-In Relay; Contacts:SPST-NO; Contact Carry Current:30A; Coil Voltage AC Max:24V; Relay Mounting:Plug-In; Relay Terminals:Screw; Coil Resistance:11.5ohm; Coil Power VAC:9.5VA RoHS Compliant: Yes 非常低功电压CMOS SRAM28K的16
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
