PART |
Description |
Maker |
AS7C33512NTF32_36A AS7C33512NTF32-36A.V1.3 AS7C335 |
3.3V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 3.3V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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CY7C1365V25 |
512K x 18 Flowthrough SRAM(512K x 18 流通式 SRAM) 直通为512k × 18的SRAM(为512k × 18流通式的SRAM
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Cypress Semiconductor Corp.
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IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B |
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
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IDT Integrated Device Technology, Inc.
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SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
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CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
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HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16)低压快闪记忆体
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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TC554001FTI-85 TC554001FTI-10 |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
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CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
GS816236BB-150I |
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
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