| PART |
Description |
Maker |
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
| ICL3237CA ICL3237CA-T ICL3237CAZ ICL3237CAZ-T ICL3 |
1 Microamp Supply-Current, 3V to 5.5V, 1Mbps, RS-232 Transmitters/Receivers(1微安电源电流, 3V5.5V, 1Mbps, RS-232收发
|
INTERSIL[Intersil Corporation]
|
| HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 |
x8 EDO Page Mode DRAM
16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位，江户
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| M5M467405DTP-5S M5M465165DTP-6S M5M467805DTP-5S M5 |
4M X 16 EDO DRAM, 50 ns, PDSO50
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 江户模式67108864位（16777216 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
