PART |
Description |
Maker |
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块) CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS |
5V 1M x 16 CMOS DRAM (EDO) 5V 1M】16 CMOS DRAM (EDO) 5V 1M16 CMOS DRAM (EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
MB8502E064AB-70 MB8502E064AB-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM 1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
VG2617400D VG26V17400D |
CMOS DRAM
|
Vanguard International Semiconductor
|