| PART |
Description |
Maker |
| STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IRFIB5N65 IRFIB5N65A |
650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
|
International Rectifier
|
| KA5M02659RN KA5M0265 KA5H02659 KA5M02659R KA5L0265 |
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,DIP,8PIN,PLASTIC
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,SIP,4PIN,PLASTIC
(KA5x02xx Series) Fairchild Power Switch(FPS)
Microprocessor Development Tool; Interface Type:Serial; Kit Contents:Development Board with on Board EEPROM, Optional DB9 Cable, and DOS Based Bootloader; For Use With:MC68HC11E1; Memory Organization - EEPROM:32k; Clock Speed:8MHz
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PZFM5
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PSFM5
Fairchild Power Switch(FPS) 飞兆半导体功率开关（FPS
Fairchild Power Switch(FPS) 8 A SWITCHING REGULATOR, PZFM4
2A/800V 70KHz Power Switch
2A/800V 100KHz Power Switch
2A/650V 50KHz Power Switch
2A/650V 100KHz Power Switch
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MSN6502Z |
650V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| BCM94311 BCM4311 |
AIRFORCE 54G 802.11A/B/G PCI EXPRESS CLIENT REFERENCE DESIGN 空军4G02.11a/b/g的PCI Express客户端参考设
|
Broadcom, Corp.
Broadcom Corp.
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
From old datasheet system
11A 200V 0.500 Ohm P-Channel Power MOSFETs
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
