| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| MRF6S21100NR1 MRF6S21100NBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF21125 MRF21125R3 MRF21125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF187 MRF187R3 MRF187SR3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
| MRF19085 MRF19085LR3 MRF19085LSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 |
RF Power Field Effect Transistors
|
Freescale (Motorola)
|
